IXGH48N60C3C1 IXYS SEMICONDUCTOR, IXGH48N60C3C1 Datasheet - Page 3

• Manufacturer Part Number: IXGH48N60C3C1
• Description: IGBT+DIODE,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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60
50
40
30
20
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
60
50
40
30
20
10
0
0
0.0
0.0
7
0.4
0.4
8
Fig. 5. Collector-to-Emitter Voltage
0.8
Fig. 3. Output Characteristics
9
0.8
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
I
C
= 60A
1.2
10
30A
15A
V
V
V
1.2
CE
CE
GE
@ 125ºC
- Volts
- Volts
@ 25ºC
- Volts
1.6
11
1.6
V
GE
2.0
12
V
= 15V
GE
13V
11V
= 15V
2.0
13V
11V
2.4
13
T
J
= 25ºC
7V
9V
2.4
2.8
14
9V
7V
3.2
2.8
15
300
250
200
150
100
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
90
80
70
60
50
40
30
20
10
0
0
5.0
25
0
5.5
2
V
GE
= 15V
Fig. 2. Extended Output Characteristics
6.0
50
4
Fig. 4. Dependence of V
6.5
13V
11V
9V
7V
6
Fig. 6. Input Admittance
Junction Temperature
T
J
- Degrees Centigrade
7.0
IXGH48N60C3C1
T
75
8
V
V
J
CE
GE
= 125ºC
@ 25ºC
- 40ºC
- Volts
- Volts
I
25ºC
I
C
7.5
10
I
C
= 15A
C
= 30A
= 60A
100
8.0
12
CE(sat)
8.5
14
on
V
GE
125
9.0
16
= 15V
9.5
18
10.0
150
20