BAT86 NXP Semiconductors, BAT86 Datasheet - Page 3

• Manufacturer Part Number: BAT86
• Description: DIODE, SCHOTTKY AMMO-BOX 10K
• Manufacturer: NXP Semiconductors

Specifications of BAT86

• Diode Type: Schottky
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 200mA
• Forward Voltage Vf Max: 450mV
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 5A
• Operating: RoHS Compliant

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulsed test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
V
I
t
C
R
SYMBOL
SYMBOL
amb
R
rr
F
d
th j-a
Schottky barrier diode
= 25 C; unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
see Fig.3
V
when switched from I
I
measured at I
f = 1 MHz; V
note 1
3
R
R
I
I
I
I
I
= 10 mA; R
F
F
F
F
F
= 40V; see Fig.4; note 1
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
R
L
R
= 1 V; see Fig.5
= 100 ;
= 1 mA; see Fig.6
F
= 10 mA to
300
380
450
600
900
5
4
8
Product specification
VALUE
MAX.
320
BAT86
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W