BCM856DS NXP Semiconductors, BCM856DS Datasheet - Page 8

• Manufacturer Part Number: BCM856DS
• Description: TRANSISTOR,PNP/PNP MATCHED,SOT457
• Manufacturer: NXP Semiconductors

Specifications of BCM856DS

• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -65V
• Gain Bandwidth Ft Typ: 175MHz
• Power Dissipation Pd: 380mW
• Dc Collector Current: -100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 290
• Rohs Compliant: Yes

NXP Semiconductors
8. Application information
9. Test information
10. Package outline
BCM856BS_BCM856DS_1
Product data sheet
Fig 9.
Fig 11. Package outline SOT363 (SC-88)
2.2
2.0
Dimensions in mm
1.35
1.15
Current mirror
9.1 Quality information
pin 1
index
6
1
0.65
TR1
V
CC
2.2
1.8
1.3
R1
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
2
5
006aaa524
4
3
l
out
TR2
0.3
0.2
0.45
0.15
0.25
0.10
1.1
0.8
Rev. 01 — 7 August 2008
06-03-16
Fig 10. Differential amplifier
Fig 12. Package outline SOT457 (SC-74)
3.0
2.5
BCM856BS; BCM856DS
Dimensions in mm
1.7
1.3
pin 1 index
OUT1
PNP/PNP matched double transistors
IN1
1
6
0.95
3.1
2.7
1.9
TR1
5
2
TR2
4
3
006aaa526
0.40
0.25
V
OUT2
IN2
V
© NXP B.V. 2008. All rights reserved.
0.6
0.2
1.1
0.9
0.26
0.10
04-11-08
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