BLF878 NXP Semiconductors, BLF878 Datasheet - Page 5

• Manufacturer Part Number: BLF878
• Description: LDMOS,RF,300W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF878

• Transistor Type: RF MOSFET
• Drain Source Voltage Vds: 89V
• Continuous Drain Current Id: 7.6A
• Operating Frequency Range: 1.3GHz
• Rf Transistor Case: SOT-979A
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF878_2
Product data sheet
7.1.1 CW
7.1 Narrowband RF figures
Fig 2.
(1) V
(2) V
I
CW power gain and drain efficiency as a function of load power; typical values
Dq
DS
DS
= 1.4 A; measured in a common source narrowband 860 MHz test circuit.
= 40 V
= 42 V
(dB)
G
p
Rev. 02 — 15 June 2009
24
22
20
18
16
0
G
D
p
100
200
(2)
(1)
(2)
(1)
300
P
001aai076
L
UHF power LDMOS transistor
(W)
400
80
60
40
20
0
(%)
D
© NXP B.V. 2009. All rights reserved.
BLF878
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