BUK6E4R0-75C NXP Semiconductors, BUK6E4R0-75C Datasheet - Page 5

• Manufacturer Part Number: BUK6E4R0-75C
• Description: MOSFET,N CH,75V,120A,SOT226
• Manufacturer: NXP Semiconductors

Specifications of BUK6E4R0-75C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 120V
• On Resistance Rds(on): 3600µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-226
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK6E4R0-75C
Product data sheet
Symbol
R
R
Fig 4.
Z
th(j-mb)
th(j-a)
th
(K/W)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
single shot
δ = 0.5
0.2
0.05
0.02
0.1
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 30 August 2010
Conditions
see
vertical in free air
Figure 4
10
-3
10
-2
BUK6E4R0-75C
Min
-
-
N-channel TrenchMOS FET
10
P
-1
t
Typ
-
60
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae375
δ =
-
Max
0.49
t
T
p
t
1
Unit
K/W
K/W
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