PBSS4041PZ NXP Semiconductors, PBSS4041PZ Datasheet - Page 5

• Manufacturer Part Number: PBSS4041PZ
• Description: TRANSISTOR,NPN,60V,5.7A,SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS4041PZ

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 770mW
• Dc Collector Current: -5.7A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-223
• No.: RoHS Compliant
• Dc Current Gain Hfe: 300
• Rohs Compliant: Yes

NXP Semiconductors
PBSS4041PZ_1
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
−1
−1
1
1
3
2
2
10
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
duty cycle = 1
0
0.33
0.1
0.02
0.75
duty cycle = 1
0.50
0.20
0.05
0.01
0
0.05
0.01
0.75
0.33
0.10
0.02
0.5
0.2
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
All information provided in this document is subject to legal disclaimers.
10
10
2
−2
−2
Rev. 01 — 31 March 2010
10
10
−1
−1
60 V, 5.7 A PNP low V
1
1
10
10
PBSS4041PZ
CEsat
10
10
2
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
t
p
p
006aac062
006aac063
(s)
(s)
10
10
3
3
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