ATF-50189-TR1 Avago Technologies US Inc., ATF-50189-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-50189-TR1
• Description: TRANSISTOR,HEMT,N-CHAN,7V V(BR)DSS,SOT-89
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-50189-TR1

• Rohs Compliant: YES
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15.5dB
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1.1dB
• Current - Test: 280mA
• Voltage - Test: 4.5V
• Power - Output: 29dBm
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
ATF-50189 Absolute Maximum Ratings
I
I
P
P
T
T
ATF-50189 Electrical Specifications
T
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.
2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
Symbol
V
V
V
DS
GS
CH
STG
diss
in
A
DS
GS
GD
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
= 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Gain
Output 3
Output Power at 1dB Compression Point
Power Added Efficiency
Adjacent Channel Leakage
Power Ratio
Parameter
Drain–Source Voltage
Gate–Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
[1]
rd
Order Intercept Point
[1,3]
[1]
[2]
[2]
[1]
[2]
[2]
[3]
at P1dB
[1,2]
[1]
[1]
Units
V
V
V
A
mA
W
dBm
°C
°C
Vds = 4.5V, Ids = 280 mA
Vds = 4.5V, Ids = 32 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm = ∆Ids/∆Vgs;
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = -4.5V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
2.25
150
-65 to 150
30
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
dBc
dBc
Notes:
1. Operation of this device above any one of
2. Assumes DC quiescent conditions.
3. Board (package belly) temperature T
4. Channel-to-board thermal resistance
these parameters may cause permanent
damage.
Derate 35 mW/°C for T
measured using 150°C Liquid Crystal
Measurement method.
Min.
0.37
—
—
175
—
—
—
14
—
43
—
27
—
45
—
—
—
Thermal Resistance
θ
ch_b
= 29°C/W
Typ.
0.53
0.38
4.1
2294
13.8
1.1
1.0
15.5
21.5
45
44
29
28.5
62
49
60.0
67.8
B
> 85°C.
[2,4]
B
Max.
0.72
—
—
—
60
—
—
17
—
—
—
—
—
—
—
—
—
is 25°C.