ATF-551M4-BLK Avago Technologies US Inc., ATF-551M4-BLK Datasheet
ATF-551M4-BLK
Specifications of ATF-551M4-BLK
Available stocks
Related parts for ATF-551M4-BLK
ATF-551M4-BLK Summary of contents
Page 1
... The combination of small device size, super low noise (under 1 dB Fmin from GHz), high linearity and low power makes the ATF-551M4 ideal for LNA or hybrid module designs in wireless receiver in the 450 MHz to 10 GHz frequency band. ...
Page 2
... ATF-551M4 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate Drain Voltage GD I Drain Current DS I Gate Current GS P Total Power Dissipation diss P RF Input Power in max. (Vd=2.7V, Id=10mA) (Vd=0V, Id=0mA) T Channel Temperature CH T Storage Temperature STG θ ...
Page 3
... Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP, and IIP measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. ATF-551M4 Electrical Specifications (see notes 2 and , as indicated) Symbol Parameter and Test Condition ...
Page 4
... ATF-551M4 Typical Performance Curves 2. (mA) ds [1] Figure 6. Gain vs. I and V at 900 MHz 2. (mA) ds [1] Figure 9. IIP3 vs. I and V at 900 MHz ds ds Notes: 1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3 ...
Page 5
... ATF-551M4 Typical Performance Curves, continued 2. (mA) ds [1] Figure 11. Gain vs. I and GHz . 2. (mA) ds [1] Figure 14. IIP3 vs. I and GHz . ds ds Notes: 1. Measurements at 2 GHz with biasing 2.7V were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure ...
Page 6
... ATF-551M4 Typical Performance Curves, continued 2. FREQUENCY (GHz) [1] Figure 16. Gain vs. Bias over Frequency . 2. FREQUENCY (GHz) [1] Figure 19. IIP3 vs. Bias over Frequency . Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise fig- ure at 2 ...
Page 7
... ATF-551M4 Typical Performance Curves, continued 30 -40°C 25°C 85° FREQUENCY (GHz) Figure 21. Gain vs. Temperature and [1] Frequency with Bias at 2.7V -40°C 25°C -5 85°C - FREQUENCY (GHz) Figure 24. IIP3 vs. Temperature and [1] Frequency with Bias at 2.7V Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise fig- ure at 2 ...
Page 8
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.0 20.41 0.5 0.954 -29.1 19.95 0.9 0.906 -50.7 19.35 1.0 0.896 -55.7 19.18 1.5 0.833 -79.5 18.15 1.9 0.790 -96.5 17.22 2.0 0.781 -100.4 17.00 2.5 0.739 -118.5 15.84 3.0 ...
Page 9
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.6 21.93 0.5 0.947 -31.6 21.41 0.9 0.892 -54.7 20.67 1.0 0.880 -60.1 20.46 1.5 0.812 -84.9 19.26 1.9 0.768 -102.1 18.23 2.0 0.758 -106.1 17.98 2.5 0.718 -124.1 16.73 3.0 ...
Page 10
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.994 -6.9 22.85 0.5 0.942 -33.3 22.27 0.9 0.882 -57.3 21.44 1.0 0.869 -62.8 21.21 1.5 0.798 -88.1 19.90 1.9 0.753 -105.5 18.79 2.0 0.744 -109.5 18.53 2.5 0.706 -127.4 17.22 3.0 ...
Page 11
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -5.9 20.55 0.5 0.955 -28.7 20.11 0.9 0.907 -50.0 19.52 1.0 0.896 -55.0 19.36 1.5 0.833 -78.6 18.34 1.9 0.789 -95.5 17.43 2.0 0.779 -99.4 17.21 2.5 0.737 -117.4 16.07 3.0 ...
Page 12
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.5 21.98 0.5 0.949 -31.2 21.47 0.9 0.894 -54.0 20.75 1.0 0.882 -59.4 20.55 1.5 0.814 -84.0 19.37 1.9 0.768 -101.1 18.34 2.0 0.758 -105.1 18.10 2.5 0.718 -123.1 16.86 3.0 ...
Page 13
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.8 22.92 0.5 0.943 -33.0 22.35 0.9 0.883 -56.9 21.53 1.0 0.87 -62.4 21.30 1.5 0.798 -87.6 20.00 1.9 0.752 -104.9 18.91 2.0 0.743 -108.8 18.65 2.5 0.704 -126.7 17.35 3.0 ...
Page 14
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.996 -5.9 20.49 0.5 0.957 -28.4 20.05 0.9 0.909 -49.6 19.48 1.0 0.899 -54.6 19.32 1.5 0.836 -78.1 18.32 1.9 0.792 -94.9 17.41 2.0 0.782 -98.8 17.20 2.5 0.740 -116.8 16.07 3.0 ...
Page 15
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.5 22.02 0.5 0.949 -31.2 21.51 0.9 0.894 -54.1 20.79 1.0 0.882 -59.4 20.59 1.5 0.813 -84.0 19.41 1.9 0.768 -101.2 18.38 2.0 0.758 -105.1 18.14 2.5 0.717 -123.1 16.90 3.0 ...
Page 16
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.995 -6.8 22.91 0.5 0.943 -33.0 22.35 0.9 0.883 -56.9 21.53 1.0 0.870 -62.4 21.30 1.5 0.798 -87.6 20.00 1.9 0.752 -104.9 18.91 2.0 0.743 -108.9 18.64 2.5 0.704 -126.7 17.35 3.0 ...
Page 17
... ATF-551M4 Typical Scattering Parameters, V Freq GHz Mag. Ang. dB 0.1 0.994 -7.4 23.90 0.5 0.936 -35.3 23.25 0.9 0.870 -60.4 22.32 1.0 0.856 -66.1 22.05 1.5 0.781 -92.0 20.61 1.9 0.736 -109.4 19.44 2.0 0.726 -113.3 19.15 2.5 0.690 -131.0 17.79 3.0 ...
Page 18
S and Noise Parameter Measurements The position of the reference planes used for the mea- surement of both S and Noise Parameter measure- ments is shown in Figure 36. The reference plane can be described as being at the center ...
Page 19
... Passive Biasing Passive biasing of the ATF-551M4 is accomplished by the use of a voltage divider consisting of R1 and R2. The voltage for the divider is derived from the drain voltage which provides a form of voltage feedback through the use help keep drain current constant ...
Page 20
... Figure . Typical ATF-551M4 LNA with Active Biasing. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor active bias scheme is shown in Figure 38. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base raised by 0 ...
Page 21
... F=1 GHz TanD=0.001 21 Maximum Suggested Gate Current The maximum suggested gate current for the ATF- 551M4 is 1 mA. Incorporating resistor R5 in the passive bias network or resistor R6 in the active bias network safely limits gate current to 500 µA at P1dB drive levels. In order to minimize component count in the passive biased amplifier circuit, the 3 resistor bias circuit consist- ing of R1, R2, and R5 can be simplified if desired ...
Page 22
... Figure . PCB Pad Print for Minipak 1412. Package (mm [inches ]). Ordering Information Part Number No. of Devices ATF-551M4-TR1 3000 ATF-551M4-TR2 10,000 ATF-551M4-BLK 100 MiniPak Package Outline Drawing 1.44 (0.058) 1.40 (0.056) Vx 1.20 (0.048) 1.16 (0.046) Top view 0.70 (0.028) 0.58 (0.023) ...
Page 23
Device Orientation for Outline 4T, MiniPak 1412 REEL CARRIER TAPE USER FEED DIRECTION COVER TAPE Tape Dimensions DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE ...