SI6562DQ-T1-GE3 Vishay, SI6562DQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6562DQ-T1-GE3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,4.5A I(D),TSSOP
• Manufacturer: Vishay

Specifications of SI6562DQ-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6562DQ-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70720
S-81056-Rev. C, 12-May-08
0.08
0.06
0.04
0.02
4.5
3.6
2.7
1.8
0.9
30
24
18
12
0
0
6
0
0
0
0
V
I
D
DS
V
= 4.5 A
On-Resistance vs. Drain Current
GS
= 10 V
3
V
V
6
2
GS
= 2.5 V
DS
Q
Output Characteristics
I
g
= 5 thru 3 V
D
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
12
6
4
2.5 V
18
9
6
V
GS
12
= 4.5 V
24
8
2 V
1.5 V
15
30
10
2100
1800
1500
1200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
900
600
300
30
24
18
12
6
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
0.5
= 4.5 A
V
V
= 4.5 V
4
GS
DS
T
Transfer Characteristics
0
J
- Junction Temperature (° C)
- Gate-to-Source Voltage (V)
- Drain-to-Source V oltage (V)
1.0
C
25 °C
oss
T
25
Capacitance
C
8
= 125 °C
1.5
50
Vishay Siliconix
C
12
iss
75
Si6562DQ
2.0
- 55 °C
www.vishay.com
100
16
2.5
125
150
3.0
20
3