SI6562DQ-T1-GE3 Vishay, SI6562DQ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI6562DQ-T1-GE3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,4.5A I(D),TSSOP
• Manufacturer: Vishay

Specifications of SI6562DQ-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6562DQ-T1-GE3TR

Si6562DQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70720.
www.vishay.com
6
0.01
0.1
10
- 0.2
- 0.4
- 0.6
30
0.8
0.6
0.4
0.2
0.0
1
2
1
0.00
10
- 50
- 4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
Source-Drain Diode Forward Voltage
- 25
0.25
V
SD
T
-
0
J
0.50
Threshold Voltage
= 150 °C
S
T
I
o
D
J
u
- Temperature (° C)
= 250 µA
c r
25
Single Pulse
e
t -
- o
10
0.75
D
50
- 3
a r
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
V
75
l o
1.00
T
a t
J
g
= 25 °C
e
100
(
) V
1.25
125
10
- 2
1.50
150
Square Wave Pulse Duration (s)
10
- 1
0.20
0.16
0.12
0.08
0.04
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.1
- Gate-to-Source Voltage (V)
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
4
DM
JM
Time (s)
- T
t
S-81056-Rev. C, 12-May-08
1
A
= P
Document Number: 70720
t
2
1
6
DM
Z
I
thJA
D
thJA
t
t
= 4.5 A
1
2
(t)
= 125 °C/W
1
8
0
10
10
3
30
0