SI6562DQ-T1-GE3 Vishay, SI6562DQ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI6562DQ-T1-GE3
• Description: TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,20V V(BR)DSS,4.5A I(D),TSSOP
• Manufacturer: Vishay

Specifications of SI6562DQ-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6562DQ-T1-GE3TR

Si6562DQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
20
10
0.4
0.2
0.0
0
0.01
- 50
0.1
0
2
1
10
- 4
- 25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
T
SD
J
Single Pulse
0
= 150 °C
-
T
I
D
Threshold Voltage
J
0.4
S
- Temperature (° C)
o
= 250 µA
25
u
c r
e
t -
10
- o
50
0.6
D
- 3
a r
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
V
l o
0.8
a t
T
J
g
100
e
= 25 °C
(
) V
1.0
125
10
- 2
150
1.2
Square Wave Pulse Duration (s)
10
- 1
0.10
0.08
0.06
0.04
0.02
40
32
24
16
8
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.1
1
- Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
4
Time (s)
- T
t
1
A
S-81056-Rev. C, 12-May-08
= P
t
2
I
Document Number: 70720
D
DM
= 4.5 A
1
Z
6
thJA
thJA
t
t
1
2
(t)
= 125 ° C/W
1
0
8
10
3
0
30
10