ST1000C12K1 Vishay, ST1000C12K1 Datasheet - Page 3

• Manufacturer Part Number: ST1000C12K1
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),1.473kA I(T),TO-200var75
• Manufacturer: Vishay

Specifications of ST1000C12K1

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: A-24
• Breakover Current Ibo Max: 21200 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• The table above shows the increment of thermal resistance R
Document Number: 93714
Revision: 02-Feb-11
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.003
0.004
0.005
0.007
0.012
For technical questions, contact:
(Hockey PUK Version), 1473 A
Phase Control Thyristors
DOUBLE SIDE
SYMBOL
SYMBOL
R
R
+ V
P
- V
P
T
0.003
0.004
0.005
0.007
0.012
V
thC-hs
I
V
thJ-hs
I
G(AV)
I
T
GM
GT
GD
Stg
GM
GD
GT
GM
J
GM
thJC
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
RECTANGULAR CONDUCTION
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
SINGLE SIDE
when devices operate at different conduction angles than DC
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
0.002
0.004
0.005
0.007
0.012
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TEST CONDITIONS
TEST CONDITIONS
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
DOUBLE SIDE
 5 ms
 5 ms
0.002
0.004
0.005
0.007
0.012
Vishay Semiconductors
DRM
ST1000C..K Series
anode to
TEST CONDITIONS
T
J
= T
J
maximum
TYP.
200
100
- 40 to 125
- 40 to 150
1.4
1.1
0.9
50
VALUES
VALUES
24 500
(2500)
0.042
0.021
0.006
0.003
A-24 (K-PUK)
0.25
425
3.0
5.0
16
20
10
3
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MAX.
200
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
N
A
g
V
V
V
3