ST1000C16K1 Vishay, ST1000C16K1 Datasheet - Page 2

• Manufacturer Part Number: ST1000C16K1
• Description: SILICON CONTROLLED RECTIFIER,1.6kV V(DRM),1.473kA I(T),TO-200var75
• Manufacturer: Vishay

Specifications of ST1000C16K1

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST1000C..K Series
Vishay Semiconductors
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
t for fusing
For technical questions, contact:
SYMBOL
SYMBOL
SYMBOL
(Hockey PUK Version), 1473 A
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
T(TO)1
T(TO)2
V
T(AV)
I
DRM
TSM
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
t
L
Phase Control Thyristors
t
,
Gate drive 20 V, 20 , t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
T
TM
pk
J
d
R
J
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
= 3000 A, T
= 550 A, T
J
J
J
maximum, anode voltage  80 % V
maximum linear to 80 % rated V
maximum, rated V
T(AV)
T(AV)
[e-mail]
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
J
J
= T
= 125 °C, t
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I <  x I
< I <  x I
g
J
J
maximum, dI/dt = 40 A/μs,
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
RRM
RRM
r
 1 μs
DRM
p
T(AV)
T(AV)
= 10 ms sine pulse
Sinusoidal half wave,
initial T
/V
RRM
), T
), T
J
J
applied
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
p
= 500 μs
Document Number: 93714
1473 (630)
VALUES
VALUES
VALUES
Revision: 02-Feb-11
55 (85)
20 000
0.950
1.024
0.283
0.265
1000
6540
2000
1865
1445
1360
1000
20.0
21.2
17.0
18.1
1.80
300
600
500
100
1.9
UNITS
UNITS
UNITS
kA
kA
A/μs
V/μs
m
mA
mA
kA
°C
μs
A
A
V
V
2
2
s
s