MWI300-12E9 IXYS, MWI300-12E9 Datasheet - Page 4

• Manufacturer Part Number: MWI300-12E9
• Description: Discrete Semiconductor Modules 300 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI300-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
600
400
200
600
500
400
300
200
100
-10
-15
-20
20
15
10
-5
0
5
0
0
0.0
0
0
Fig.  Typ. forward characteristics
Fig. 3 Typ. output characteristics
Fig. 5 Typ. turn on gate charge
V
I
C
T
CE
J
= 100 A
= 25°C
= 600 V
0.5
of free wheeling diode
1
T
1.0
J
2
= 125°C
Q
V
V
G
F
1.5
T
CE
2
J
[V]
[µC]
= 25°C
[V]
11 V
13 V
15 V
17 V
19 V
2.0
4
3
2.5
9 V
3.0
6
4
600
500
400
300
200
100
300
200
100
600
500
400
300
200
100
1000
0
0
0
0
Fig. 2 Typ. transfer characteristics
Fig. 4 Typ. output characteristics
Fig. 6 Typ. turn off characteristics
T
I
T
V
I
J
RM
F
J
R
= 125°C
= 125°C
= 300 A
= 600 V
6
T
of free wheeling diode
24
24
J
= 125°C
2000
18
18
2
-di/dt
T
8
J
V
= 25°C
CE
V
12
12
GE
[V]
[A/µs]
MWI 300-12 E9
[V]
3000
5.6
4
5.6
10
11 V
13 V
15 V
17 V
19 V
t
rr
9 V
2.4
2.4
4000
12
6
900
600
300
0
4 - 5