MWI300-12E9 IXYS, MWI300-12E9 Datasheet - Page 5

• Manufacturer Part Number: MWI300-12E9
• Description: Discrete Semiconductor Modules 300 Amps 1200V
• Manufacturer: IXYS
• Type: Six-Pack IGBT Modulesr

Specifications of MWI300-12E9

• Product: Power Semiconductor Modules
• Mounting Style: Screw
• Package / Case: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
180
150
120
80
60
40
20
90
60
30
18
16
14
12
10
0
0
8
6
4
0
0
Fig. 7 Typ. turn on energy and switching times
Fig. 9 Typ. turn on energy and switching times
Fig.  Typ. turn off energy and recovered charge
Q rr
V
V
I
T
C
V
I
T
1000
CE
GE
VJ
F
VJ
= 300 A
R
100
= 600 V
= ±15 V
= 125°C
= 125°C
= 600 V
versus collector current
versus gate resistor
= ±15 V
of free wheeling diode
10
V
V
R
T
VJ
CE
GE
G
E
E
on
rec(off)
200
= 2.4
= 600 V
= ±15 V
= 125°C
24
E rec(off)
18
24
2000
di/dt
18
R
I
C
300
G
20
[A/µs]
[A]
[ ]
12
12
E
E
on
400
rec(off)
3000
5.6
5.6
30
t
d(on)
t
500
d(on)
t
t
r
r
2.4
4000
600
40
240
180
120
60
0
600
500
400
300
200
100
0
42
36
30
24
18
12
0.12
0.10
0.08
0.06
0.04
0.02
0.00
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
1
Fig. 8 Typ. turn off energy and switching times
Fig. 0 Typ. turn off energy and switching times
Fig. 2 Typ. transient thermal impedance
E
single pulse
off
V
V
I
T
E
C
CE
GE
VJ
off
100
= 300 A
= 600 V
= ±15 V
= 125°C
versus collector current
versus gate resistor
10
10
200
I
300
C
R
100
t
20
G
[A]
[ms]
MWI 300-12 E9
[ ]
V
V
R
T
400
VJ
CE
GE
G
t
d(off)
= 2.4
= 600 V
= ±15 V
= 125°C
1000
t
f
30
500
MWI300-12E9
t
d(off)
diode
IGBT
t
10000
f
600
40
800
600
400
200
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
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