IXGH10N300 IXYS, IXGH10N300 Datasheet - Page 3

• Manufacturer Part Number: IXGH10N300
• Description: IGBT Transistors Very High Voltage NPT IGBT; 3000V VCES
• Manufacturer: IXYS

Specifications of IXGH10N300

• Vces, (v): 3000
• Ic25, Tc=25°c, Igbt, (a): 18
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.0
0.0
5
0.5
0.5
7
1.0
9
1.0
Fig. 5. Collector-to-Emitter Voltage
1.5
Fig. 3. Output Characteristics
Fig. 1. Output Characteristics
vs. Gate-to-Emitter Voltage
11
1.5
2.0
13
V
2.5
CE
2.0
V
@ 125ºC
V
I
@ 25ºC
- Volts
GE
C
CE
= 20A
3.0
10A
5A
15
- Volts
- Volts
V
2.5
GE
3.5
= 25V
V
17
15V
GE
20V
= 25V
3.0
4.0
15V
20V
19
4.5
10V
5V
3.5
10V
5V
21
V
GE
5.0
= 15V
4.0
23
5.5
6.0
4.5
25
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
5
0
0
-50
3
0
V
GE
4
-25
= 15V
Fig. 2. Extended Output Characteristics
5
5
Fig. 4. Dependence of V
0
6
V
Fig. 6. Input Admittance
GE
10
Junction Temperature
T
= 25V
J
7
25
- Degrees Centigrade
10V
20V
15V
V
5V
GE
V
@ 25ºC
8
CE
- Volts
15
50
- Volts
IXGH10N300
I
I
C
9
C
I
T
= 20A
C
J
= 10A
= 5A
= - 40ºC
75
10
125ºC
25ºC
CE(sat)
20
11
100
on
12
25
125
13
150
30
14