IXGH10N300 IXYS, IXGH10N300 Datasheet - Page 4

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IXGH10N300

Manufacturer Part Number
IXGH10N300
Description
IGBT Transistors Very High Voltage NPT IGBT; 3000V VCES
Manufacturer
IXYS
Datasheet

Specifications of IXGH10N300

Vces, (v)
3000
Ic25, Tc=25°c, Igbt, (a)
18
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10.0
35
30
25
20
15
10
1.0
0.1
5
0
0.0001
200
8
7
6
5
4
3
2
1
0
0
T
R
dV / dt < 10V / ns
J
G
= 125ºC
= 50Ω
600
5
Fig. 9. Reverse-Bias Safe Operating Area
10
1000
Fig. 7. Transconductance
15
I
V
C
1400
CE
0.001
- Amperes
- Volts
20
1800
25
Fig. 11. Maximum Transient Thermal Impedance
2200
Fig. 11. Maximum Transient Thermal Impedance
30
T
J
= - 40ºC
2600
125ºC
25ºC
0.01
35
Pulse Width - Seconds
3000
40
1,000
100
16
14
12
10
10
8
6
4
2
0
1
0
0
f
V
I
I
C
G
= 1 MHz
0.1
CE
= 10A
= 10mA
5
= 950V
5
10
10
Fig. 10. Capacitance
Fig. 8. Gate Charge
Q
15
G
- NanoCoulombs
15
V
CE
- Volts
20
IXGH10N300
1
20
25
C oes
C ies
C res
25
30
30
35
10
35
40

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