IXGH10N300 IXYS, IXGH10N300 Datasheet - Page 5

• Manufacturer Part Number: IXGH10N300
• Description: IGBT Transistors Very High Voltage NPT IGBT; 3000V VCES
• Manufacturer: IXYS

Specifications of IXGH10N300

• Vces, (v): 3000
• Ic25, Tc=25°c, Igbt, (a): 18
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 1.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
1,000
360
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120
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0
0
25
50
10
R
V
V
T
V
GE
CE
t
G
Fig. 16. Resistive Turn-off Switching Times
35
J
CE
r
= 50Ω
Fig. 14. Resistive Turn-on Switching Times
= 125ºC, V
= 15V
= 1250V
= 1250V
15
100
45
Fig. 12. Resistive Turn-on Rise Time
GE
t
d(on)
= 15V
vs. Collector Current
vs. Junction Temperature
55
vs. Gate Resistance
20
- - - -
T
J
150
R
- Degrees Centigrade
G
65
I
C
- Ohms
T
- Amperes
J
= 25ºC, 125ºC
25
75
200
t
R
V
I
85
f
G
CE
C
30
= 50Ω, V
= 40A
= 1250V
I
C
I
C
= 40A
95
= 20A
250
t
GE
d(off
35
= 15V
105
)
I
- - - -
C
= 20A
115
300
40
220
200
180
160
140
120
100
80
500
450
400
350
300
250
200
150
100
50
0
125
320
280
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160
120
700
600
500
400
300
200
100
700
600
500
400
300
200
100
80
40
10
25
50
R
V
V
G
GE
CE
35
Fig. 15. Resistive Turn-off Switching Times
Fig. 17. Resistive Turn-off Switching Times
T
V
t
= 50Ω
J
CE
r
= 15V
= 1250V
= 125ºC, V
= 1250V
15
100
45
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
GE
t
T
55
d(on)
J
vs. Gate Resistance
= 15V
- Degrees Centigrade
20
vs. Collector Current
- - - -
150
R
65
G
- Ohms
T
J
I
I
I
C
= 125ºC
C
75
C
= 40A
- Amperes
= 20A
25
IXGH10N300
I
I
200
T
C
C
85
J
t
R
V
= 20A
= 40A
= 25ºC
f
G
CE
= 50Ω, V
= 1250V
95
30
GE
250
105
t
d(off
= 15V
)
- - - -
115
35
IXYS REF: G_10N300(3P)5-05-09
300
125
650
550
450
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250
150
50
200
180
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140
120
100
80
40