NZX12B,133 NXP Semiconductors, NZX12B,133 Datasheet - Page 3

• Manufacturer Part Number: NZX12B,133
• Description: DIODE ZENER 12V 500MW DO-35
• Manufacturer: NXP Semiconductors

Specifications of NZX12B,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Zener (nom) (vz): 12V
• Voltage - Forward (vf) (max) @ If: 1.5V @ 200mA
• Current - Reverse Leakage @ Vr: 100nA @ 8V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (max) (zzt): 35 Ohm
• Mounting Type: Through Hole
• Operating Temperature: -55°C ~ 175°C
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061979133

NXP Semiconductors
7. Characteristics
NZX_SER
Product data sheet
Fig 1.
R
(K/W)
th(j-a)
10
10
10
1
3
2
10
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−1
δ = 1
≤0.001
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
Table 7.
T
[1]
Table 8.
T
Symbol
V
NZXxxx
2V1
2V4
2V7
3V0
3V3
j
j
F
1
= 25
= 25
Pulse test: t
°
°
C unless otherwise specified.
C unless otherwise specified.
Characteristics
Characteristics per type; NZX2V1B to NZX18C
Parameter
forward voltage
p
Sel
B
A
B
A
B
C
A
B
C
A
B
C
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
10
Rev. 3 — 21 January 2011
Working voltage
V
I
Min
2.0
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
Z
Z
= 5 mA
(V)
10
2
Conditions
I
Max
2.6
2.8
2.9
3.1
3.2
3.4
3.5
2.2
2.5
2.7
3.0
3.3
F
= 200 mA
10
3
Differential
resistance
r
I
Max
100
100
100
100
100
Z
dif
= 5 mA
(Ω)
[1]
Min
-
10
4
Reverse current
I
Max
5
50
20
10
5
R
NZX series
(μA)
Single Zener diodes
Typ
-
t
p
© NXP B.V. 2011. All rights reserved.
(ms)
006aab601
Max
1.5
V
0.5
1
1
1
1
10
R
5
(V)
Unit
V
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