CY7C1470BV33-200AXC Cypress Semiconductor Corp, CY7C1470BV33-200AXC Datasheet

CY7C1470BV33-200AXC

CY7C1470BV33-200AXC

Manufacturer Part Number
CY7C1470BV33-200AXC
Description
CY7C1470BV33-200AXC
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1470BV33-200AXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1470BV33-200AXC
Manufacturer:
TI
Quantity:
12 000
Part Number:
CY7C1470BV33-200AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture
Features
Selection Guide
Cypress Semiconductor Corporation
Document Number: 001-15032 Rev. *H
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Pin-compatible and functionally equivalent to ZBT™
Supports 250 MHz bus operations with zero wait states
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte Write capability
Single 2.5 V power supply
2.5 V IO supply (V
Fast clock-to-output times
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1470BV25,
JEDEC-standard
non-Pb-free
available in Pb-free and non-Pb-free 209-ball FBGA package
IEEE 1149.1 JTAG Boundary Scan compatible
Burst capability—linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Available speed grades are 250, 200, and 167 MHz
3.0 ns (for 250-MHz device)
165-ball FBGA
Description
DDQ
Pb-free
)
CY7C1472BV25
100-pin
package. CY7C1474BV25
TQFP,
available
Pipelined SRAM with NoBL™ Architecture
198 Champion Court
Pb-free
72-Mbit (2 M × 36/4 M × 18/1 M × 72)
250 MHz
450
120
3.0
and
in
Functional Description
The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25
are 2.5 V, 2 M × 36/4 M × 18/1 M × 72 synchronous pipelined
burst SRAMs with No Bus Latency™ (NoBL logic,
respectively. They are designed to support unlimited true
back-to-back read or write operations with no wait states. The
CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are
equipped with the advanced (NoBL) logic required to enable
consecutive read or write operations with data being transferred
on every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent read or write
transitions.
CY7C1474BV25 are pin-compatible and functionally equivalent
to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the Byte Write Selects
(BW
CY7C1472BV25, and BW
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
a
–BW
CY7C1472BV25, CY7C1474BV25
d
San Jose
200 MHz
The
450
120
3.0
for
CY7C1470BV25,
,
CA 95134-1709
CY7C1470BV25,
a
–BW
h
for CY7C1474BV25) and a
CY7C1470BV25
167 MHz
Revised March 28, 2011
CY7C1472BV25,
400
120
3.4
1
, CE
BW
2
, CE
a
408-943-2600
–BW
3
) and an
b
Unit
mA
mA
ns
and
for
[+] Feedback

Related parts for CY7C1470BV33-200AXC

CY7C1470BV33-200AXC Summary of contents

Page 1

... Selection Guide Description Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Cypress Semiconductor Corporation Document Number: 001-15032 Rev. *H CY7C1472BV25, CY7C1474BV25 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Functional Description The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 are 2 × ...

Page 2

Logic Block Diagram – CY7C1470BV25 (2 M × 36) A0, A1, A MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ CE1 CE2 CE3 ZZ Logic Block Diagram – CY7C1472BV25 ...

Page 3

Logic Block Diagram – CY7C1474BV25 (1 M × 72) A0, A1, A MODE CLK C CEN WRITE ADDRESS ADV/ CE1 CE2 CE3 ...

Page 4

Contents Pin Configurations ........................................................... 5 Pin Definitions .................................................................. 7 Functional Overview ........................................................ 8 Single Read Accesses ................................................ 8 Burst Read Accesses .................................................. 8 Single Write Accesses ................................................. 8 Burst Write Accesses .................................................. 9 Sleep Mode ................................................................. 9 Linear Burst Address ...

Page 5

Pin Configurations DQPc 1 DQc 2 DQc DDQ DQc 6 DQc 7 DQc 8 DQc DDQ 11 DQc 12 DQc CY7C1470BV25 ...

Page 6

Pin Configurations (continued) 165-ball FBGA (15 × 17 × 1.4 mm) Pinout NC/576M NC/1G A CE2 C DQP DDQ DDQ ...

Page 7

Pin Definitions Pin Name IO Type A0 Input- Address Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the A1 Synchronous CLK Input- Byte Write Select Inputs, Active LOW. Qualified with WE ...

Page 8

Pin Definitions (continued) Pin Name IO Type TMS Test Mode Select TMS Pin Controls the Test Access Port State Machine. Sampled on the rising edge of TCK. Synchronous TCK JTAG Clock Clock Input to the JTAG Circuitry. V Power Supply ...

Page 9

Address Register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQ and DQP (DQ /DQP for CY7C1470BV25, DQ a,b,c,d a,b,c,d CY7C1472BV25, DQ /DQP ...

Page 10

Truth Table The truth table for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows. Address Operation Deselect Cycle Continue Deselect Cycle Read Cycle (Begin Burst) External Read Cycle (Continue Burst) NOP/Dummy Read (Begin Burst) External Dummy Read (Continue Burst) Write Cycle (Begin Burst) ...

Page 11

Partial Write Cycle Description The partial write cycle description for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows. Function (CY7C1470BV25) Read Write – No bytes written Write Byte a – (DQ and DQP ) a a Write Byte b – (DQ and DQP ...

Page 12

IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full ...

Page 13

Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram on page 12. During power up, ...

Page 14

CLK captured in the boundary scan register. After the data is captured possible to shift out the data by putting the TAP into the Shift-DR ...

Page 15

TAP AC Switching Characteristics [12, 13] Over the Operating Range Parameter Clock t TCK Clock Cycle Time TCYC t TCK Clock Frequency TF t TCK Clock HIGH time TH t TCK Clock LOW time TL Output Times t TCK Clock ...

Page 16

V TAP AC Test Conditions Input pulse levels................................................V Input rise and fall time .....................................................1 ns Input timing reference levels........................................ 1.25 V Output reference levels ............................................... 1.25 V Test load termination supply voltage ........................... 1.25 V TAP DC Electrical Characteristics ...

Page 17

Identification Codes Instruction Code EXTEST 000 Captures IO ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High Z state. This instruction is not 1149.1-compliant. IDCODE 001 Loads the ID register with the ...

Page 18

Boundary Scan Exit Order (4 M × 18) Bit # 165-ball ID Bit # ...

Page 19

Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................ –65 °C to +150 °C Ambient Temperature with Power Applied .......................................... –55 °C to +125 °C Supply Voltage ...

Page 20

Electrical Characteristics (continued) [15, 16] Over the Operating Range (continued) Parameter Description I Automatic CE SB3 Power Down Current—CMOS Inputs I Automatic CE SB4 Power Down Current—TTL Inputs Capacitance Tested initially and after any design or process changes that may ...

Page 21

Switching Characteristics [18, 19] Over the Operating Range Parameter Description [20 (typical) to the First Access Read or Write Power CC Clock t Clock Cycle Time CYC F Maximum Operating Frequency MAX t Clock HIGH CH t Clock ...

Page 22

Switching Waveforms Figure 2 shows read-write timing waveform CYC CLK CENS CENH CH CEN t t CES CEH CE ADV/ ADDRESS Data In-Out (DQ) ...

Page 23

Switching Waveforms (continued) Figure 3 shows NOP, STALL and DESELECT Cycles waveform CLK CEN CE ADV/LD WE BWx A1 A2 ADDRESS Data In-Out (DQ) WRITE READ D(A1) Q(A2) Figure 4 shows ZZ Mode timing waveform. CLK ZZ t ...

Page 24

Ordering Information Cypress offers other versions of this type of product in many different configurations and features. The below table contains only the list of parts that are currently available. For a complete listing of all options, visit the Cypress ...

Page 25

Package Diagrams Figure 5. 100-pin TQFP (14 × 20 × 1.4 mm), 51-85050 Document Number: 001-15032 Rev. *H CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 51-85050 *D Page [+] Feedback ...

Page 26

Package Diagrams (continued) Figure 6. 165-ball FBGA (15 × 17 × 1.4 mm), 51-85165 Document Number: 001-15032 Rev. *H CY7C1470BV25 CY7C1472BV25, CY7C1474BV25 51-85165 *B Page [+] Feedback ...

Page 27

Document History Page Document Title: CY7C1470BV25/CY7C1472BV25/CY7C1474BV25, 72-Mbit (2 M × 36/4 M × 18/1 M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 001-15032 REV. ECN No. Issue Date Orig. of Change ** 1032642 See ECN VKN/KKVTMP *A 1562503 ...

Page 28

... Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-15032 Rev. *H NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All products and company names mentioned in this document may be the trademarks of their respective holders. ...

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