CY7C1470BV33-200AXC Cypress Semiconductor Corp, CY7C1470BV33-200AXC Datasheet - Page 16

• Manufacturer Part Number: CY7C1470BV33-200AXC
• Description: CY7C1470BV33-200AXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1470BV33-200AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.5 V TAP AC Test Conditions
Input pulse levels................................................V
Input rise and fall time .....................................................1 ns
Input timing reference levels........................................ 1.25 V
Output reference levels ............................................... 1.25 V
Test load termination supply voltage ........................... 1.25 V
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < T
Identification Register Definitions
Scan Register Sizes
Note
Document Number: 001-15032 Rev. *H
V
V
V
V
V
V
I
Revision Number (31:29)
Device Depth (28:24)
Architecture/Memory Type (23:18)
Bus Width/Density (17:12)
Cypress JEDEC ID Code (11:1)
ID Register Presence Indicator (0)
Instruction
Bypass
ID
Boundary Scan Order–165-ball FBGA
Boundary Scan Order–209-ball BGA
14. All voltages refer to V
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
A
Instruction Field
< +70 °C; V
Register Name
SS
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
(GND).
DD
= 2.5 V ± 0.125 V unless otherwise noted)
Description
CY7C1470BV25
00000110100
(2 M × 36)
001000
100100
01011
000
I
I
I
I
V
V
GND  V
1
OH
OH
OL
OL
DDQ
DDQ
= 1.0 mA, V
= 100 A, V
SS
= –1.0 mA, V
= –100 A, V
= 2.5 V
= 2.5 V
to 2.5 V
I
 V
CY7C1472BV25
DDQ
00000110100
Test Conditions
(4 M × 18)
DDQ
DDQ
Bit Size (× 36)
001000
010100
DDQ
DDQ
01011
000
1
= 2.5 V
= 2.5 V
= 2.5 V
= 2.5 V
32
71
2.5 V TAP AC Output Load Equivalent
[14]
3
–
1
CY7C1472BV25, CY7C1474BV25
CY7C1474BV25
00000110100
TDO
(1 M × 72)
001000
110100
01011
000
1
Bit Size (× 18)
Z = 50Ω
52
32
O
3
1
–
Describes the version number
Reserved for internal use
Defines
architecture
Defines width and density
Allows
SRAM vendor
Indicates the presence of an ID
register
–0.3
Min
1.7
2.1
1.7
–5
–
–
unique
CY7C1470BV25
Description
memory
V
1.25V
DD
Max
0.4
0.2
0.7
Bit Size (× 72)
–
–
5
+ 0.3
identification
20pF
50Ω
110
Page 16 of 28
32
3
1
–
type
Unit
A
V
V
V
V
V
V
and
of
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