J108,126 NXP Semiconductors, J108,126 Datasheet - Page 2

• Manufacturer Part Number: J108,126
• Description: JFET N-CH 25V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J108,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 80mA @ 5V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 0V
• Resistance - Rds(on): 8 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Cutoff Voltage: - 10 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 80 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
QUICK REFERENCE DATA
1996 Jul 30
V
V
I
P
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
SYMBOL
DSS
High speed switching
Interchangeability of drain and source connections
Low R
Analog switches
Choppers and commutators.
DS
GSoff
tot
N-channel silicon junction FETs
DSon
drain-source voltage
gate-source cut-off voltage
drain current
total power dissipation
at zero gate voltage (<8
J108
J109
J110
J108
J109
J110
CAUTION
PARAMETER
for J108).
I
V
up to T
2
D
GS
= 1 A; V
PINNING - TO-92
handbook, halfpage
= 0; V
PIN
1
2
3
amb
CONDITIONS
DS
= 50 C
DS
Fig.1 Simplified outline and symbol.
= 5 V
1
= 5 V
2
3
SYMBOL
g
d
s
J108; J109; J110
gate
source
drain
80
40
10
3
2
0.5
MIN.
Product specification
DESCRIPTION
MAM197
g
400
MAX.
25
10
6
4
V
V
V
V
mA
mA
mA
mW
UNIT
d
s