BYC10-600CT,127 NXP Semiconductors, BYC10-600CT,127 Datasheet - Page 3

• Manufacturer Part Number: BYC10-600CT,127
• Description: DIODE FAST 600V 10A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYC10-600CT,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 2.9V @ 5A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 600 V
• Forward Voltage Drop: 2.9 V at 5 A
• Recovery Time: 50 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 44 A
• Reverse Current Ir: 100 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1781; 934055972127; BYC10-600CT

Philips Semiconductors
March 2001
Rectifier diode
ultrafast, low switching loss
diode, as a function of rate of change of current dI
reverse recovery of diode, as a function of of change
Fig.4. Typical reverse recovery switching losses per
15
10
Fig.3. Maximum forward dissipation per diode as a
5
4
3
2
1
0
Fig.5. Typical switching losses in transistor due to
0.15
0.05
5
0
100
0.2
0.1
function of average forward current; rectangular
0
Forward dissipation, PF (W)
Transistor losses due to diode reverse recovery, Ptsw (W)
0
VR = 400 V
Rs = 0.09 Ohms
100
Vo = 1.3 V
Tj = 125 C
f = 20 kHz
BYC5-600
current waveform where I
Diode reverse recovery switching losses, Pdsw (W)
VR = 400 V
IF = 5 A
Tj = 125 C
f = 20 kHz
BYC5-600
7.5 A
1
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
10 A
Average forward current, IF(AV) (A)
2
0.1
of current dI
10 A
3
0.2
IF = 5 A
7.5 A
4
BYC5-600
I
F
5
F(AV)
/dt.
0.5
t
p
=I
T
6
D = 1.0
F(RMS)
Tmb(max) C
D =
7
x D.
t
T
p
t
8
1000
1000
112.5
125
137.5
150
F
/dt.
3
Fig.7. Typical reverse recovery time t
Fig.6. Origin of switching losses in transistor due to
diode, I
Fig.8. Typical peak reverse recovery current per
100
100
10
10
1
100
100
function of rate of change of current dI
Reverse recovery time, trr (ns)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
Tj = 125 C
VR = 400 V
rrm
VD
ID
Rate of change of current, dIF/dt (A/us)
Rate of change of current, dIF/dt (A/us)
as a function of rate of change of current
dIF/dt
diode reverse recovery.
IF = 5 A
10 A
10 A
IF = 5 A
dI
Irrm
F
/dt.
losses due to
diode reverse recovery
BYC10-600CT
time
ID = IL
7.5 A
Product specification
rr
, per diode as a
BYC5-600
BYC5-600
F
Rev 1.200
/dt.
1000
1000