STPS30H100CW STMicroelectronics, STPS30H100CW Datasheet
STPS30H100CW
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STPS30H100CW
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STPS30H100CW Summary of contents
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... Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth July 2003 - Ed: 5E STPS30H100CW/ 100 V 175 °C 0.67 V STPS30H100CW Parameter Tc = 155° sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25° TO-220AB TO-247 STPS30H100CT Value 100 30 ...
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... STPS30H100CW/CT THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 µs, < evaluate the maximum conduction losses use the following equation : ...
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... Tc=75°C 0.4 Tc=150°C 0.2 0.0 1E-4 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 500 200 100 100 1 STPS30H100CW/ (25°C) T (° 100 = 0.5 = 0.2 = 0.1 Single pulse tp(s) 1E-3 1E-2 1E-1 VR( ...
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... STPS30H100CW/CT Fig. 9: Forward voltage drop versus forward cur- rent (maximum values, per diode). IFM(A) 200 100 Tj=125°C Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 PACKAGE MECHANICAL DATA TO-247 F(x3 COOLING METHOD: C RECOMMENDED TORQUE VALUE: 0.8 N.M. MAXIMUM TORQUE VALUE: 1 N.M. ...
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... Diam. Package Weight TO-247 4.36g TO-220AB 2.20 g STMicroelectronics GROUP OF COMPANIES http://www.st.com STPS30H100CW/CT DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1 ...