STPS30H100CW STMicroelectronics, STPS30H100CW Datasheet - Page 3

• Manufacturer Part Number: STPS30H100CW
• Description: DIODE SCHOTTKY 100V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS30H100CW

• Voltage - Forward (vf) (max) @ If: 800mV @ 15A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7560-5; STPS30H100CW

Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
Fig. 5: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
240
220
200
180
160
140
120
100
2E+0
1E+0
1E-1
1E-2
1E-3
1E-4
1E-5
0.01
80
60
40
20
0.1
1E-3
0
0.01
1
IM(A)
P
0
P
ARM
IR(mA)
I
ARM p
M
(1µs)
10
(t )
=0.5
t
0.1
20
1E-2
30
Tj=125°C
Tj=25°C
1
40
t (µs)
p
VR(V)
t(s)
50
10
60
1E-1
70
100
80
Tc=25°C
Tc=75°C
Tc=150°C
90 100
1E+0
1000
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.0
0.8
0.6
0.4
0.2
0.0
1000
500
200
100
1
0
1E-4
0
P
Zth(j-c)/Rth(j-c)
P
ARM
1
C(pF)
ARM p
= 0.2
= 0.1
= 0.5
Single pulse
(25°C)
(t )
25
2
1E-3
50
5
T (°C)
tp(s)
1E-2
j
VR(V)
75
10
STPS30H100CW/CT
100
20
1E-1
=tp/T
125
50
T
F=1MHz
Tj=25°C
tp
1E+0
100
150
3/5