STPS30H100CW STMicroelectronics, STPS30H100CW Datasheet - Page 3

• Manufacturer Part Number: STPS30H100CW
• Description: DIODE SCHOTTKY 100V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS30H100CW

• Voltage - Forward (vf) (max) @ If: 800mV @ 15A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 30 A
• Max Surge Current: 250 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.93 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7560-5; STPS30H100CW

STPS30H100C
Figure 1.
Figure 3.
Figure 5.
240
220
200
180
160
140
120
100
14
12
10
80
60
40
20
8
6
4
2
0
1E-3
0.001
0
0.01
0
P
0.1
I (A)
M
F(AV)
1
0.01
P
P
I
ARM
M
ARM
2
(W)
(1 µs)
(t p )
δ
=0.5
t
δ = 0.05
4
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
0.1
6
1E-2
δ = 0.1
8
1
I
δ = 0.2
F(AV)
t (µs)
p
10
t(s)
(A)
10
12
1E-1
δ = 0.5
14
100
δ
16
=tp/T
δ = 1
Doc ID 6347 Rev 6
T
18
T =150°C
T =25°C
T =75°C
a
a
a
1000
tp
1E+0
20
Figure 2.
Figure 4.
Figure 6.
18
16
14
10
1.0
0.8
0.6
0.4
0.2
0.0
12
8
6
4
2
0
1E-4
0
1.2
0.8
0.6
0.4
0.2
I
F(AV)
Z
1
0
th(j-c)
δ = 0.5
δ = 0.2
Single pulse
δ = 0.1
25
P
δ
=tp/T
ARM
P
(A)
ARM
/R
25
R
(25 °C)
th(j-a)
th(j-c)
T
(T j )
=15°C/W
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-3
tp
50
50
75
75
T
t (s)
R
amb
T (°C)
1E-2
p
th(j-a)
j
=R
(°C)
th(j-c)
100
100
125
Characteristics
1E-1
125
δ
=tp/T
150
T
tp
150
1E+0
175
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