BT169D NXP Semiconductors, BT169D Datasheet - Page 6

• Manufacturer Part Number: BT169D
• Description: SCRs BULK SCR
• Manufacturer: NXP Semiconductors

Specifications of BT169D

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT169D,112

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13512
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
t
GT
L
H
D
gt
q
j
T
GT
= 25 C unless otherwise stated.
, I
D
R
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage
current
critical rate of rise of
off-state voltage
gate controlled
turn-on time
circuit commuted
turn-off time
Conditions
V
gate open circuit; see
V
R
V
R
I
I
see
V
T
V
exponential waveform;
see
I
I
V
I
dI
R
T
T
TM
G
TM
j
D
D
D
D
DM
D
GK
GK
GK
TM
= 1.2 A
= 10 mA; gate open circuit;
V
V
R
gate open circuit
= 125 C; R
= 10 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
= 67 % V
D
D
= 2 A; V
= 1.6 A; V
GK
Figure 7
Figure 12
/dt = 30 A/ s; dV
= 1 k ; see
= 1 k ; see
= 1 k
= 67 % V
= 12 V
= V
DRM(max)
= 1 k
DRM(max)
Rev. 04 — 23 August 2004
T
GT
GT
D
DRM(max)
= 10 mA;
= V
R
DRM(max)
GK
G
= 0.5 mA;
= 0.5 mA;
; V
/dt = 0.1 A/ s
= 35 V;
Figure 10
Figure 11
DRM(max)
; T
= 1 k
R
= V
j
; T
= 125 C
D
Figure 8
; T
/dt = 2 V/ s;
RRM(max)
j
= 125 C;
j
;
= 125 C;
;
Min
-
-
-
-
-
0.2
-
500
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT169 series
Typ
50
2
2
1.25
0.5
0.3
0.05
800
25
2
100
Thyristors logic level
Max
200
6
5
1.7
0.8
-
0.1
-
-
-
-
Unit
mA
mA
V
V
V
mA
V/ s
V/ s
A
s
s
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