NE85619 NEC, NE85619 Datasheet
NE85619
Specifications of NE85619
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NE85619 Summary of contents
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... HIGH RELIABILITY METALLIZATION • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost ...
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... TYP MAX MIN GHz 7.0 dB 1 120 300 50 1.0 μA 1.0 μA pF 0.55 1.0 mW 200 625 °C/W NE856 SERIES NE85619 NE85630 NE85632 2SC5006 2SC4226 2SC3355 19 30 3.0 4.5 4.5 1.4 1.3 2.2 2.2 12 120 160 40 110 250 1.0 1.0 1 ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C T Junction Temperature J T Storage Temperature STG Notes: 1. Operation in excess ...
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TYPICAL PERFORMANCE CURVES NE85634 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 25 20 MAG 21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 V ...
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... 1.0 2.0 NE85619 = 25°C) TYPICAL NOISE PARAMETERS A FREQ. ANG Rn/50 (MHz 2 138 0.13 500 158 0.19 800 176 0. 2 -141 0.47 500 ...
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NE85632 TYPICAL NOISE PARAMETERS FREQ Γ OPT A OPT (MHz) (dB) (dB) MAG 500 1.1 0.20 1000 1.6 30.72 0.34 NE85633 TYPICAL NOISE PARAMETERS FREQ Γ ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ...
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... TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 0.964 -14.4 100 0.957 -26.7 200 0.920 -50.4 300 0.871 -71.6 400 0.833 -90.1 500 0.798 -105.2 600 0.772 -118 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ...
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NE85618 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
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... NE85619 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR 3.9 ITF IKR 0.17 PTF ISC 0.38 XTB RB 4.16 XTI RBM 3.6 KF IRB 1 ...
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NE85630 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85633 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85635 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85639 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
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OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ...
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OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ...
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... MAX 0.55 +0.10 0.4 -0.05 (LEADS 1.9 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 0.16 +0.10 -0.06 4. Emitter 1.8 +0.10 -0.05 PIN CONNECTIONS 1. Emitter 2. Collector -0.06 3. Emitter 4. Base NE856 SERIES PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2 1.9 1 1.0 PACKAGE OUTLINE 39R RECOMMENDED P ...
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... NE85634-T1 1000 NE85635 1 NE85639-T1 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY NE85600 100 NE85618-T1-A 3000 NE85619-T1-A 3000 NE85630-T1-A 3000 NE85632-A 1 NE85633-T1B-A 3000 NE85634-T1-A 1000 NE85635 1 NE85639-T1-A 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. ...
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Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...