UPA895TD NEC, UPA895TD Datasheet

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UPA895TD

Manufacturer Part Number
UPA895TD
Description
RF Bipolar Small Signal NPN Dual High Freq
Manufacturer
NEC
Datasheet

Specifications of UPA895TD

Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
DESCRIPTION
NEC's UPA895TD contains two NE851 high frequency silicon
bipolar chips. The NE851 is an excellent oscillator chip, featur-
ing low 1/f noise and high immunity to pushing effects. NEC's
new ultra small TD package is ideal for all portable wireless
applications where reducing board space is a prime consider-
ation. Each transistor chip is independently mounted and
easily configured for oscillator/buffer amplifier and other
applications.
ELECTRICAL CHARACTERISTICS
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:
• LOW HEIGHT PROFILE:
• TWO LOW NOISE OSCILLATOR TRANSISTORS:
• IDEAL FOR 1-3 GHz OSCILLATORS
1.2 mm x 0.8 mm
Just 0.50 mm high
NE851
|S
SYMBOLS
21
|S
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
|S
I
I
Cre
h
CBO
NF
EBO
21E
f
21E
FE
T
guard pin of capacitances meter.
|
2
|
2
E
|
2
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
Gain Bandwidth at V
Feedback Capacitance
Insertion Power Gain at V
Insertion Power GainIat V
Noise Figure at V
PARAMETERS AND CONDITIONS
PACKAGE OUTLINE
PART NUMBER
1
CE
at V
= 1 V, I
CE
CE
2
= 1 V, I
at V
= 3 V, I
CE
CE
EB
C
CB
CB
= 1 V, I
= 1 V, I
= 10 mA, f = 2 GHz
= 1 V, I
C
= 10 V, I
= 3 V, I
C
= 15 mA, f = 2 GHz
NEC's NPN SILICON RF
= 7 mA
(T
C
C
C
A
=5 mA, f = 2 GHz
=15 mA, f = 2 GHz
= 0
E
= 25°C)
E
= 0, f = 1 MHz
= 0
TWIN TRANSISTOR
OUTLINE DIMENSIONS
ORDERING INFORMATION
PART NUMBER
UPA895TD-T3-A
UNITS
GHz
dB
dB
dB
nA
nA
pF
California Eastern Laboratories
1.0±0.05
0.8
+0.07
-0.05
Package Outline TD
MIN
100
5.0
3.0
4.5
(TOP VIEW)
10K Pcs./Reel
QUANTITY
UPA895TD
UPA895TD
(Units in mm)
TD
TYP
120
6.5
0.6
4.0
5.5
1.9
C2
C1
E1
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
1
2
3
(Top View)
Q1
Q2
PACKAGING
Tape & Reel
MAX
6
5
4
600
600
145
0.8
2.5
B1
E2
B2

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UPA895TD Summary of contents

Page 1

... NE851 • IDEAL FOR 1-3 GHz OSCILLATORS DESCRIPTION NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featur- ing low 1/f noise and high immunity to pushing effects. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consider- ation ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current Total Power Dissipation T T Junction Temperature J T Storage Temperature ...

Page 3

TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 400 µa 360 µa 50 320 µ Collector to Emitter Voltage CURRENT GAIN vs. COLLECTOR CURRENT 1000 ...

Page 4

... UPA895TD TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 20 MAG 21e 0 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz MAG 21e Collector Current NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current 25° 100 (mA 100 (mA) INSERTION POWER GAIN, MAG, MSG vs ...

Page 5

... TYPICAL SCATTERING PARAMETERS Q1 j50 j25 j10 100 S 22 -j10 -j25 -j50 UPA895TD Frequency S 11 GHz MAG ANG 0.100 0.834 -40.0 0.200 0.782 -74.1 0.300 0.729 -98.7 0.400 0.701 -116.6 0.500 0.682 -129.7 0.600 0.674 -139.9 0.700 0.667 -148.0 0.800 0.667 -154.6 ...

Page 6

... UPA895TD TYPICAL SCATTERING PARAMETERS Q2 j50 j25 j10 100 S 22 -j10 -j25 -j50 UPA895TD Frequency S 11 GHz MAG ANG 0.100 0.833 -39.7 0.200 0.774 -73.7 0.300 0.716 -98.2 0.400 0.685 -116.2 0.500 0.666 -129.4 0.600 0.657 -139.6 0.700 0.650 -147.8 0.800 0.650 -154 ...

Page 7

... TYPICAL SCATTERING PARAMETERS Q1 j50 j25 S 11 j10 100 S 22 -j10 -j25 -j50 UPA895TD Frequency S 11 GHz MAG ANG 0.100 0.586 -81.0 0.200 0.577 -121.5 0.300 0.567 -141.5 0.400 0.570 -152.9 0.500 0.571 -160.7 0.600 0.575 -166.6 0.700 0.578 -171.4 0.800 0.583 -175 ...

Page 8

... TYPICAL SCATTERING PARAMETERS Q2 j50 j25 j10 100 S 22 -j10 -j25 -j50 UPA895TD Frequency S 11 GHz MAG ANG 0.100 0.575 -80.7 0.200 0.555 -121.1 0.300 0.543 -141.3 0.400 0.544 -152.8 0.500 0.545 -160.7 0.600 0.549 -166.7 0.700 0.552 -171.5 0.800 0.557 -175.3 ...

Page 9

... UPA895TD NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1 IS 137e-18 BF 166 NF 0.9871 VAF 20.4 IKF 50 ISE 80.4e-15 NE 2.4 BR 28.7 NR 0.9889 VAR 2.7 IKR 0.021 ISC 532e-18 NC 1. RBM 1 IRB 0 RC 1.7 CJE 2.4e-12 VJE 0.87 MJE 0.34 CJC 0.65e-12 VJC ...

Page 10

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 11

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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