NE5520379A NEC, NE5520379A Datasheet
NE5520379A
Manufacturer Part Number
NE5520379A
Description
RF GaAs L&S Band LD-MOSFET
Manufacturer
NEC
Specifications of NE5520379A
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
2.5 S
Gate-source Breakdown Voltage
5 V
Continuous Drain Current
1.5 A
Power Dissipation
20 W
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE5520379A
Manufacturer:
NEC
Quantity:
20 000
Part Number:
NE5520379A-T1
Manufacturer:
NEC
Quantity:
20 000
Company:
Part Number:
NE5520379A-T1A
Manufacturer:
SPANSION
Quantity:
1 000
Document No. PU10122EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
Printed in Japan
DESCRIPTION
for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology and housed in a surface mount
package. This device can deliver 34.6 dBm output power with 68% power efficiency at 915 MHz under the 2.8 V
supply voltage.
FEATURES
• High output power
• High power added efficiency : η
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• Digital cellular phones
• Others
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5520379A-T1
NE5520379A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS
Part number for sample order: NE5520379A
3.2 V OPERATION SILICON RF POWER LDMOS FET
: 3.2 V GSM/DCS Dual-Band handsets
: General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications
Package
79A
: P
: P
: η
: G
: G
: 5.7 × 5.7 × 1.1 mm MAX.
: V
add
add
out
out
DS
L
L
= 16.0 dB TYP. (V
= 8.5 dB TYP. (V
The mark
= 35.5 dBm TYP. (V
= 33.0 dBm TYP. (V
= 2.8 to 6.0 V
= 65% TYP. (V
= 35% TYP. (V
DATA SHEET
shows major revised points.
Marking
A3
DS
DS
DS
DS
= 3.2 V, V
= 3.2 V, V
= 3.2 V, V
= 3.2 V, V
DS
DS
= 3.2 V, V
= 3.2 V, V
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
GS
GS
GS
GS
= 2.5 V, f = 915 MHz, P
= 2.5 V, f = 1 785 MHz, P
= 2.5 V, f = 1 785 MHz, P
= 2.5 V, f = 915 MHz, P
GS
GS
SILICON POWER MOS FET
= 2.5 V, f = 915 MHz, P
= 2.5 V, f = 1 785 MHz, P
NE5520379A
Supplying Form
NEC Compound Semiconductor Devices 2000, 2003
in
= 25 dBm)
in
in
in
= 25 dBm)
= 10 dBm)
= 10 dBm)
in
= 25 dBm)
in
= 25 dBm)
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