UPA814T NEC, UPA814T Datasheet

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UPA814T

Manufacturer Part Number
UPA814T
Description
RF Bipolar Small Signal NPN High Frequency
Manufacturer
NEC
Datasheet
1.UPA814T-T1.pdf (4 pages)

Specifications of UPA814T

Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
0.11 W
Package / Case
SO-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
ELECTRICAL CHARACTERISTICS
• SMALL PACKAGE STYLE:
• LOW NOISE FIGURE:
• HIGH GAIN BANDWIDTH: f
• HIGH COLLECTOR CURRENT: 100 mA
NEC's UPA814T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
various hand-held wireless applications.
DESCRIPTION
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
ABSOLUTE MAXIMUM RATINGS
Note: 1.Operation in excess of any one of these parameters may
T
SYMBOLS
h
, low voltage bias and small size make this device suited for
SYMBOLS
FE1
|S
2 NE688 Die in a 2 mm x 1.25 mm package
NF = 1.5 dB TYP at 2 GHz
Cre
I
I
h
V
V
V
T
CBO
EBO
NF
21E
FE 1
f
P
/h
CBO
CEO
T
T
EBO
I
STG
C
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA814T-T1, 3K per reel.
T
J
2
FE2
|
2
result in permanent damage.
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
h
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
FE
Ratio:
PARAMETERS
PARAMETERS AND CONDITIONS
1 Die
2 Die
h
h
FE1
FE2
PACKAGE OUTLINE
= Smaller Value of Q
= Larger Value of Q
CE
PART NUMBER
= 3 V, I
T
CE
= 9 GHz
= 3 V, I
CE
EB
CE
CB
C
CB
= 3 V, I
= 7 mA, f = 2 GHz
FREQUENCY TRANSISTOR
= 1 V, I
= 1 V, I
UNITS
= 1 V, I
C
mW
mW
= 5V, I
mA
°C
°C
V
V
V
= 20 mA, f = 2 GHz
1
C
C
C
1
or Q
=20 mA, f = 2 GHz
, or Q
1
E
E
= 0
= 3 mA
= 0
= 0, f = 1 MHz
(T
-65 to +150
(T
RATINGS
2
A
A
2
= 25°C)
100
110
200
150
= 25°C)
9
6
2
NPN SILICON HIGH
UNITS
GHz
µA
µA
dB
dB
pF
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
OUTLINE DIMENSIONS
2.0 ± 0.2
0.9 ± 0.1
1.3
California Eastern Laboratories
0.7
MIN
0.85
0.65
80
PACKAGE OUTLINE S06
2
3
1
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
UPA814T
TYP
0.75
S06
110
9.0
6.5
1.5
(Units in mm)
UPA814T
6
5
4
0.2 (All Leads)
0.15
MAX
0.85
+0.10
- 0.05
160
0.1
0.1

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UPA814T Summary of contents

Page 1

... FE2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA814T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... UPA814T TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 0 50 100 Ambient Temperature, T COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector to Emitter Voltage, V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current 25°C) A Free Air 150 (°C) A 200 µA 180 µA 160 µA 140 µ ...

Page 3

... Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE (T = 25° PACKAGING Tape & Reel RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS UPA814T FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE MHz 1.0 0.5 0 Collector to Base Voltage, V (V) CB NOISE FIGURE vs. FREQUENCY ...

Page 4

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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