BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 5

• Manufacturer Part Number: BFM505 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFM505 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFM505,115

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
Fig.2
V
Fig.4
(mW)
CE
P tot
h FE
250
200
150
100
= 6 V.
600
400
200
50
0
0
10
0
Power derating as a function of soldering
−3
DC current gain as a function of collector
point temperature; typical values.
current; typical values.
double loaded
single loaded
10
−2
50
10
−1
100
1
150
10
T s (
I C (mA)
MRA719
MBG208
o
C)
200
10
2
5
handbook, halfpage
handbook, halfpage
(GHz)
f = 1 GHz; T
Fig.3
I
Fig.5
C
f T
(pF)
C re
= 0; f = 1 MHz.
12
0.4
0.3
0.2
0.1
4
0
8
10
0
0
−1
Transition frequency as a function of
collector current; typical values.
Feedback capacitance as a function of
collector-base voltage; typical values.
amb
= 25 C.
2
4
1
V CE = 6V
6
3 V
I C (mA)
Product specification
8
V CB (V)
BFM505
MGD687
MRA720
10
10