BFM505 T/R NXP Semiconductors, BFM505 T/R Datasheet - Page 7

• Manufacturer Part Number: BFM505 T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFM505 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 8 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFM505,115

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
V
Fig.10 Minimum noise figure as a function of
V
Fig.12 Minimum noise figure as a function of
CE
CE
(dB)
(dB)
F
F
= 3 V.
= 3 V.
5
4
3
2
1
0
5
4
3
2
0
1
10
10
−1
2
collector current; typical values.
frequency; typical values.
1.25 mA
5 mA
2000 MHz
1000 MHz
900 MHz
500 MHz
10
1
3
I C (mA)
f (MHz)
MGC766
MGC768
10
10
4
7
handbook, halfpage
V
handbook, halfpage
Fig.11 Associated available gain as a function of
V
Fig.13 Associated available gain as a function of
G ass
CE
(dB)
G ass
CE
(dB)
= 3 V.
= 3 V.
20
15
10
−5
20
15
10
−5
0
5
0
5
10
10
collector current; typical values.
frequency; typical values.
−1
2
I C = 1.25 mA
5 mA
10
1
3
f = 900 MHz
2 GHz
1GHz
Product specification
I C (mA)
f (MHz)
BFM505
MGD686
MGC769
10
10
4