BLS6G2933S-130 NXP Semiconductors, BLS6G2933S-130 Datasheet - Page 4

• Manufacturer Part Number: BLS6G2933S-130
• Description: RF MOSFET Small Signal 130W, 2.9-3.3GHz Radar Appl.
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2933S-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063208112

NXP Semiconductors
BLS6G2933S-130_3
Product data sheet
7.1 Ruggedness in class-AB operation
Table 8.
The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: V
I
f
GHz
2.9
3.0
3.1
3.2
3.3
Dq
Fig 1.
= 100 mA; P
Definition of transistor impedance
Typical impedance
All information provided in this document is subject to legal disclaimers.
L
= 130 W; t
Rev. 03 — 3 March 2010
p
= 300 μs; δ = 10 %.
Z
Ω
2.2 − j7.6
2.5 − j6.6
3.2 − j5.6
4.5 − j4.8
6.8 − j5.3
S
gate
Z
S
001aaf059
LDMOS S-band radar power transistor
Z
drain
L
BLS6G2933S-130
Z
Ω
4.5 − j5.6
4.3 − j5.7
4.0 − j5.8
3.6 − j5.8
3.2 − j5.8
L
DS
= 32 V;
© NXP B.V. 2010. All rights reserved.
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