BLF2043F NXP Semiconductors, BLF2043F Datasheet - Page 2

• Manufacturer Part Number: BLF2043F
• Description: RF MOSFET Small Signal BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF2043F

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohmss
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 11(Min)@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 30(Min)%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF2043F,112

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2002 Mar 05
CW, class-AB (2-tone)
V
V
I
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
D
MODE OF OPERATION
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance
Designed for broadband operation (HF to 2.2 GHz).
Communication transmitter applications in the UHF
frequency range.
DS
GS
UHF power LDMOS transistor
SYMBOL
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
h
= 25 C in a common source test circuit.
f
1
= 2200; f
(MHz)
2
f
PARAMETER
= 2200.1
CAUTION
V
2
(V)
26
DS
PINNING - SOT467C
PIN
10 (PEP)
1
2
3
(W)
P
L
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
65
1
2
MIN.
(dB)
>11
G
p
DESCRIPTION
65
2.2
+150
200
MBK584
Product specification
15
3
MAX.
>30
(%)
BLF2043F
D
V
V
A
C
C
(dBc)
UNIT
d
im
26