BLF888 NXP Semiconductors, BLF888 Datasheet - Page 8
BLF888
Manufacturer Part Number
BLF888
Description
RF MOSFET Small Signal 500W, 470-860MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888.pdf
(17 pages)
Specifications of BLF888
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.105 Ohms
Drain-source Breakdown Voltage
104 V
Gate-source Breakdown Voltage
11 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934062101112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF888A
Manufacturer:
XYSEMI
Quantity:
12 000
Part Number:
BLF888A
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BLF888AS
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
BLF888
Product data sheet
Table 8.
Simulated Z
f
MHz
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
i
Typical push-pull impedance
and Z
All information provided in this document is subject to legal disclaimers.
L
device impedance; impedance info at V
Rev. 5 — 21 January 2011
3.395 + j3.212
3.746 + j3.317
4.142 + j3.377
4.583 + j3.374
5.063 + j3.288
5.566 + j3.094
6.064 + j2.770
6.514 + j2.299
Z
1.417 + j0.961
1.492 + j1.171
1.577 + j1.378
1.672 + j1.582
1.779 + j1.783
1.901 + j1.983
2.039 + j2.180
2.196 + j2.373
2.376 + j2.563
2.581 + j2.745
2.817 + j2.918
3.087 + j3.076
i
…continued
DS
= 50 V and P
UHF power LDMOS transistor
Z
4.346 + j0.432
4.214 + j0.353
4.084 + j0.266
3.958 + j0.173
3.834 + j0.074
3.713 j0.031
3.596 j0.142
3.482 j0.257
3.372 j0.377
3.266 j0.501
3.163 j0.628
3.064 j0.759
2.968 j0.893
2.876 j1.030
2.787 j1.170
2.701 j1.312
2.619 j1.455
2.540 j1.601
2.464 j1.749
2.391 j1.898
L
L(PEP)
© NXP B.V. 2011. All rights reserved.
BLF888
= 600 W (DVB-T).
8 of 17