BLF4G20LS-130 NXP Semiconductors, BLF4G20LS-130 Datasheet - Page 2

• Manufacturer Part Number: BLF4G20LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W
• Power Gain (typ)@vds: 14.6@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 65(Typ)@9.5Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 38.5%
• Mounting: Surface Mount
• Mode Of Operation: CW/GSM EDGE/2-Tone
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20LS-130,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF4G20LS-130_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
BLF4G20LS-130 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier
applications in the 1800 MHz to 2000 MHz frequency range.
Connected to flange
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
Rev. 01 — 1 June 2007
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
BLF4G20LS-130
UHF power LDMOS transistor
1
2
3
Symbol
Min
-
-
-
© NXP B.V. 2007. All rights reserved.
0.5
65
2
Max
65
+15
15
+150
200
sym112
Version
SOT502B
1
3
2 of 11
Unit
V
V
A
C
C