BLF4G20LS-130 NXP Semiconductors, BLF4G20LS-130 Datasheet - Page 5

• Manufacturer Part Number: BLF4G20LS-130
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G20LS-130

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 130W
• Power Gain (typ)@vds: 14.6@28VdB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 11S
• Drain Source Resistance (max): 65(Typ)@9.5Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 38.5%
• Mounting: Surface Mount
• Mode Of Operation: CW/GSM EDGE/2-Tone
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G20LS-130,112

NXP Semiconductors
BLF4G20LS-130_1
Product data sheet
Fig 2. Two-tone CW power gain and drain efficiency
Fig 4. Third order intermodulation distortion as function of average load power; typical values
(dB)
(1) I
(2) I
(3) I
(4) I
G
p
16
15
14
13
12
11
V
f = 1990 MHz.
as functions of load power; typical values
V
Dq
Dq
Dq
Dq
0
DS
DS
= 800 mA.
= 900 mA.
= 1000 mA.
= 1100 mA.
= 28 V; I
= 28 V; T
20
7.3 Two-tone CW
Dq
case
= 900 mA; T
= 25 C; f = 1990 MHz.
G
40
D
p
60
case
IMD3
(dBc)
= 25 C;
20
40
60
80
0
0
80
001aag527
P
L
(W)
20
100
Rev. 01 — 1 June 2007
50
40
30
20
10
0
(%)
D
(1)
(2)
(3)
(4)
40
Fig 3. Intermodulation distortion as a function of
60
(dBc)
IMD
20
40
60
80
0
V
f = 1990 MHz.
average load power; typical values
0
DS
80
P
001aag529
L(AV)
= 28 V; I
(W)
20
100
Dq
= 900 mA; T
BLF4G20LS-130
40
UHF power LDMOS transistor
60
case
= 25 C;
© NXP B.V. 2007. All rights reserved.
80
P
001aag528
IMD3
IMD5
IMD7
L(AV)
(W)
100
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