PD57060 STMicroelectronics, PD57060 Datasheet - Page 12

RF MOSFET Power N-Ch 65 Volt 7.0 Amp

PD57060

Manufacturer Part Number
PD57060
Description
RF MOSFET Power N-Ch 65 Volt 7.0 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57060

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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PD57060 - PD57060S
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