PD57060 STMicroelectronics, PD57060 Datasheet - Page 3

RF MOSFET Power N-Ch 65 Volt 7.0 Amp

PD57060

Manufacturer Part Number
PD57060
Description
RF MOSFET Power N-Ch 65 Volt 7.0 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57060

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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TYPICAL PERFORMANCE (PD57060S)
Capacitance vs. Supply Voltage
Gate-Source Voltage vs Case Temperature
Power Gain vs Output Power
C (pF)
1000
VGS (Normalized)
1.06
1.04
1.02
0.98
0.96
0.94
0.92
100
Gp (dB)
18
16
14
12
10
10
8
6
4
2
1
1
-25
0
0
VDS = 10 V
10
5
0
20
10
30
25
Pout (W)
VDS (V)
Tc (°C)
890MHz
15
40
Crss
50
50
Id = 1 A
20
960MHz
925MHz
Ciss
Coss
60
Id = 0.5 A
75
VDS=28V
IDQ=100mA
25
Id = 2 A
Id = 5 A
f = 1 MHz
Id = 4 A
Id = 3 A
70
945MHz
100
30
80
Drain Current vs Gate-Source Voltage
Output Power vs Input Power
Drain Efficiency vs Output Power
Nd (%)
70
60
50
40
30
20
Pout (W)
80
70
60
50
40
30
20
10
0
Id (A)
8
7
6
5
4
3
2
0
1
0
2
0
2.5
0.5
10
20
3
1
925MHz
1.5
3.5
30
890MHz
Pout (W)
VGS (V)
Pin (W)
PD57060 - PD57060S
40
2
4
890MHz
4.5
2.5
945MHz
50
960MHz
945MHz
60
5
3
925MHz
960MHz
VDS=28V
IDQ=100mA
VDS=10 V
VDS=28V
IDQ=100mA
5.5
3.5
70
80
6
4
3/12

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