PMBD7000,215 NXP Semiconductors, PMBD7000,215 Datasheet - Page 9
![DIODE SW DBL 100V 215MA HS SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
PMBD7000,215
Manufacturer Part Number
PMBD7000,215
Description
DIODE SW DBL 100V 215MA HS SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBD7000215.pdf
(12 pages)
Specifications of PMBD7000,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 100V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Rectifier Type
Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.215A
Rev Curr
0.5uA
Peak Non-repetitive Surge Current (max)
4A
Forward Voltage
1.1@0.1AV
Operating Temp Range
-65C to 150C
Package Type
TO-236AB
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1736-2
933859210215
PMBD7000 T/R
933859210215
PMBD7000 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBD7000,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
12. Revision history
Table 9.
PMBD7000
Product data sheet
Document ID
PMBD7000 v.4
Modifications:
PMBD7000_3
PMBD7000_2
PMBD7000_1
Revision history
20100916
19990511
19960918
19960419
Release date
•
•
•
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 4 “Marking
Table 7
Figure
Section 8 “Test
Section 8.1 “Quality
Section 13 “Legal
2: updated
“Characteristics”: corrected V
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
information”: figure title of
Rev. 4 — 16 September 2010
codes”: updated
information”: updated
information”: added
F
unit for condition I
Figure 6
Change notice
-
-
-
-
Double high-speed switching diode
amended
F
= 150 mA
Supersedes
PMBD7000_3
PMBD7000_2
PMBD7000_1
-
PMBD7000
© NXP B.V. 2010. All rights reserved.
9 of 12