BAV199,215 NXP Semiconductors, BAV199,215 Datasheet - Page 3

DIODE SW DBL 75V 160MA SOT23

BAV199,215

Manufacturer Part Number
BAV199,215
Description
DIODE SW DBL 75V 160MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV199,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 75V
Current - Average Rectified (io) (per Diode)
160mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.16 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1619-2
934032640215
BAV199 T/R
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
2001 Oct 12
Per diode
V
I
C
t
R
R
j
R
rr
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
F
Low-leakage double diode
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
measured at I
R
I
I
I
I
V
V
= 10 mA; R
F
F
F
F
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 75 V
= 75 V; T
R
3
CONDITIONS
R
L
= 0; see Fig.6
j
= 100 Ω;
= 1 mA; see Fig.7
= 150 °C
note 1
F
CONDITIONS
= 10 mA to
0.003
3
2
0.8
TYP.
VALUE
360
500
900
1 000
1 100
1 250
5
80
3
Product data sheet
MAX.
BAV199
UNIT
K/W
K/W
mV
mV
mV
mV
nA
nA
pF
µs
UNIT

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