BAV199,215 NXP Semiconductors, BAV199,215 Datasheet - Page 4

DIODE SW DBL 75V 160MA SOT23

BAV199,215

Manufacturer Part Number
BAV199,215
Description
DIODE SW DBL 75V 160MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV199,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
5nA @ 75V
Current - Average Rectified (io) (per Diode)
160mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
3µs
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Standard Recovery Rectifier
Configuration
Dual Series
Reverse Voltage
85 V
Forward Voltage Drop
1.25 V at 0.15 A
Recovery Time
3000 ns
Forward Continuous Current
0.16 A
Max Surge Current
4 A
Reverse Current Ir
0.005 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1619-2
934032640215
BAV199 T/R
NXP Semiconductors
GRAPHICAL DATA
2001 Oct 12
handbook, full pagewidth
handbook, halfpage
Low-leakage double diode
Device mounted on a FR4 printed-circuit board.
Fig.2
Based on square wave currents; T
I FSM
(mA)
(A)
I F
10
300
200
100
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
10
−1
0
1
2
0
1
Maximum permissible continuous forward
current as a function of ambient
temperature.
double diode loaded
single diode loaded
100
j
= 25 °C prior to surge.
10
T
amb
( C)
o
MLB756
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
0
j
j
j
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage; per diode.
0.4
10
3
0.8
(1)
t p (µs)
(2)
1.2
Product data sheet
V
MLB752 - 1
(3)
F
BAV199
MBG704
(V)
10
1.6
4

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