1PS70SB14,115 NXP Semiconductors, 1PS70SB14,115 Datasheet - Page 4

• Manufacturer Part Number: 1PS70SB14,115
• Description: DIODE SCHOTTKY 30V 200MA SC70
• Manufacturer: NXP Semiconductors

Specifications of 1PS70SB14,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Diode Configuration: 1 Pair Series Connection
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Series
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1PS70SB14 T/R::1PS70SB14 T/R::934054918115

NXP Semiconductors
GRAPHICAL DATA
1999 Apr 26
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
I F
10
(pF)
C d
10
10
10
15
10
amb
amb
amb
1
5
0
3
2
1
0
0
= 125 °C.
= 85 °C.
= 25 °C.
(1)
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 °C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V F (V)
V R (V)
MSA891
MSA892
1.2
30
4
(1) T
(2) T
(3) T
Fig.7
(μA)
I
R
10
10
10
10
amb
amb
amb
3
2
1
1
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
10
20
Product data sheet
V
R
(1)
(2)
(3)
(V)
MSA893
30