BAV23A,215 NXP Semiconductors, BAV23A,215 Datasheet - Page 6

DIODE SW HI-VOLT DUAL SOT-23

BAV23A,215

Manufacturer Part Number
BAV23A,215
Description
DIODE SW HI-VOLT DUAL SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV23A,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
225mA (DC)
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
125 mA
Max Surge Current
625 mA
Configuration
Dual Common Anode
Recovery Time
50 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
250 mW
Operating Temperature Range
- 65 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061766215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV23A,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
8. Test information
BAV23_SER_7
Product data sheet
Fig 4.
Fig 6.
(pF)
V = V
(1) I
C
1.0
0.8
0.6
0.4
0.2
d
R
S
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
Reverse recovery time test circuit and waveforms
0
R
R
= 50
+ I
= 1 mA
F
Ω
×
R
S
2
amb
= 25 C
I
4
F
D.U.T.
6
All information provided in this document is subject to legal disclaimers.
OSCILLOSCOPE
V
mga881
R
SAMPLING
mbg447
R
(V)
i
= 50
Rev. 07 — 19 March 2010
8
Ω
V
R
Fig 5.
t
10 %
r
(mA)
I
(1) Single diode loaded.
(2) Double diode loaded.
90 %
F
300
200
100
0
input signal
0
FR4 PCB, standard footprint
Forward current as a function of ambient
temperature; derating curves
t
p
(1)
(2)
Dual high-voltage switching diodes
50
t
100
BAV23 series
+ I
F
output signal
150
© NXP B.V. 2010. All rights reserved.
T
amb
006aab214
t rr
(°C)
200
(1)
t
6 of 13

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