BAW101S,115 NXP Semiconductors, BAW101S,115 Datasheet - Page 3

• Manufacturer Part Number: BAW101S,115
• Description: DIODE DUAL 300V 250MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of BAW101S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V at 0.1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057353115; BAW101S T/R; BAW101S T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13
Per diode
V
V
I
I
I
P
T
T
T
Per diode
V
V
I
t
C
SYMBOL
SYMBOL
j
F
FRM
FSM
R
rr
stg
j
amb
R
RRM
tot
= 25 °C unless otherwise specified.
BR(R)
F
High voltage double diode
d
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
reverse breakdown voltage
forward voltage
reverse current
reverse recovery time
diode capacitance
PARAMETER
PARAMETER
I
I
V
V
when switched from I
R
V
R
F
R
R
R
L
= 100 mA; note 1
= 100 µA
= 100 Ω; measured at I
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
series connection
series connection
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
t = 1 µs
T
amb
= 25 °C; note 1
amb
3
CONDITIONS
= 150 °C
CONDITIONS
F
j
= 25 °C prior to surge;
= 30 mA to I
R
= 3 mA
R
= 30 mA;
2
.
−
−
−
−
−
−
−
−
−
−65
−
−65
300
−
−
−
−
−
MIN.
MIN.
Product data sheet
300
600
300
600
250
140
625
4.5
350
+150
150
+150
−
1.1
150
50
50
2
BAW101S
MAX.
MAX.
V
V
V
V
mA
mA
mA
A
mW
°C
°C
°C
V
V
nA
µA
ns
pF
UNIT
UNIT