BAW101S,115 NXP Semiconductors, BAW101S,115 Datasheet - Page 5

• Manufacturer Part Number: BAW101S,115
• Description: DIODE DUAL 300V 250MA SOT-363
• Manufacturer: NXP Semiconductors

Specifications of BAW101S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 150nA @ 250V
• Current - Average Rectified (io) (per Diode): 250mA (DC)
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Anti Parallel
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V at 0.1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057353115; BAW101S T/R; BAW101S T/R

NXP Semiconductors
2003 May 13
handbook, full pagewidth
handbook, halfpage
High voltage double diode
Based on square wave currents.
T
(1) V
(2) V
Fig.5
j
I FSM
= 25 °C prior to surge.
(µA)
(A)
10
10
10
I R
10
10
10
10
−1
−1
−2
R
R
1
1
2
2
= V
= V
0
1
Reverse current as a function of junction
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
RMAX
RMAX
: maximum values.
: typical values.
50
(1)
(2)
100
10
150
T j (°C)
MLE058
200
10
5
2
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.6
0.5
0.4
0.3
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
10
3
4
6
t p (µs)
Product data sheet
BAW101S
8
V R (V)
MBG703
MLE059
10
10
4