BAT54VV,115 NXP Semiconductors, BAT54VV,115 Datasheet

DIODE SCHTK TRPL 30V 200MASOT666

BAT54VV,115

Manufacturer Part Number
BAT54VV,115
Description
DIODE SCHTK TRPL 30V 200MASOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAT54VV,115

Package / Case
SS Mini-6 (SOT-666)
Mounting Type
Surface Mount
Speed
Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr
2µA @ 25V
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Diode Configuration
3 Independent
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
200 mA
Max Surge Current
0.6 A
Configuration
Triple Parallel
Forward Voltage Drop
240 mV
Maximum Reverse Leakage Current
2 uA
Maximum Power Dissipation
170 mW
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058224115::BAT54VV T/R::BAT54VV T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT54VV,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Planar Schottky barrier triple diode with an integrated guard ring for stress protection.
Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
SMD plastic package.
Table 1.
Table 2.
Symbol
V
I
Pin
1
2
3
4
5
6
F
R
BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
Rev. 02 — 15 January 2010
Low forward voltage
Ultra small SMD plastic package
Low capacitance
Flat leads: excellent coplanarity and improved thermal behavior
Ultra high-speed switching
Voltage clamping
Line termination
Inverse-polarity protection
Quick reference data
Pinning
Parameter
continuous reverse voltage
continuous forward current
Description
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
cathode (diode 2)
cathode (diode 1)
Conditions
Simplified outline
1
6
Min
-
-
5
2
SOT666
4
3
Typ
-
-
Product data sheet
Symbol
Max
30
200
6
1
5
2
sym046
Unit
V
mA
4
3

Related parts for BAT54VV,115

BAT54VV,115 Summary of contents

Page 1

BAT54VV Schottky barrier triple diode in ultra small SOT666 package Rev. 02 — 15 January 2010 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier ...

Page 2

... NXP Semiconductors 3. Ordering information Table 3. Type number BAT54VV 4. Marking Table 4. Type number BAT54VV 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode FRM I FSM P tot amb T stg [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. ...

Page 3

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Per diode [1] Pulse test: t BAT54VV_2 Product data sheet Schottky barrier triple diode in ultra small SOT666 package Characteristics C unless otherwise specified. Parameter Conditions forward voltage see Figure 0 100 mA F reverse current see R diode capacitance MHz; ...

Page 4

... NXP Semiconductors (1) (2) (mA (1) (2) (3) 1 − 0.4 = 125 °C (1) T amb = 85 °C (2) T amb = 25 °C (3) T amb Fig 1. Forward current as a function of forward voltage; typical values = 25 ° MHz T amb Fig 3. Diode capacitance as a function of reverse voltage; typical values BAT54VV_2 Product data sheet ...

Page 5

... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 4. Package outline SOT666. BAT54VV_2 Product data sheet Schottky barrier triple diode in ultra small SOT666 package ...

Page 6

... NXP Semiconductors 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package BAT54VV SOT666 [1] For further information and the availability of packing methods, see BAT54VV_2 Product data sheet Schottky barrier triple diode in ultra small SOT666 package ...

Page 7

... Table 9. Revision history Document ID Release date BAT54VV_2 20100115 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 2 • Figure 4 “Package outline BAT54VV_1 ...

Page 8

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 9

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Packing information . . . . . . . . . . . . . . . . . . . . . 6 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 Legal information ...

Related keywords