BAT54VV,115 NXP Semiconductors, BAT54VV,115 Datasheet - Page 3

• Manufacturer Part Number: BAT54VV,115
• Description: DIODE SCHTK TRPL 30V 200MASOT666
• Manufacturer: NXP Semiconductors

Specifications of BAT54VV,115

• Package / Case: SS Mini-6 (SOT-666)
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Diode Configuration: 3 Independent
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 200 mA
• Max Surge Current: 0.6 A
• Configuration: Triple Parallel
• Forward Voltage Drop: 240 mV
• Maximum Reverse Leakage Current: 2 uA
• Maximum Power Dissipation: 170 mW
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058224115::BAT54VV T/R::BAT54VV T/R

NXP Semiconductors
7. Characteristics
BAT54VV_2
Product data sheet
Table 7.
T
[1]
Symbol
Per diode
V
I
C
R
amb
F
d
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 15 January 2010
Schottky barrier triple diode in ultra small SOT666 package
Conditions
see
V
V
see
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; see
= 1 V; f = 1 MHz;
Figure
Figure 3
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
1;
Figure 2
[1]
Min
-
-
-
-
-
-
-
BAT54VV
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
240
320
400
500
800
2
10
Unit
mV
mV
mV
mV
mV
μA
pF
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