BYV32E-200,127 NXP Semiconductors, BYV32E-200,127 Datasheet - Page 3

• Manufacturer Part Number: BYV32E-200,127
• Description: DIODE FAST DUAL 20A 200V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1667-5; 934011690127; BYV32E-200

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV32E-200_4
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
12
8
4
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
4.0
4
2.8
2.2
1.9
a = 1.57
8
Conditions
DC
square-wave pulse; δ = 0.5; T
diodes conducting; see
δ = 0.5; t
t
diode
t
diode
δ = 0.001; t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
p
p
p
= 8.3 ms; sine-wave pulse; T
= 10 ms; sine-wave pulse; T
= 100 µs
I
F(AV)
003aac978
(A)
p
= 25 µs; T
Rev. 04 — 27 February 2009
p
12
= 2 µs
mb
≤ 115 °C; per diode
Figure
Fig 2.
Dual rugged ultrafast rectifier diode, 20 A, 200 V
mb
P
(W)
j(init)
1; see
j(init)
tot
15
10
≤ 115 °C; both
5
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
= 25 °C; per
= 25 °C; per
Figure 2
0.1
5
0.2
BYV32E-200
0.5
Min
-
-
-
-
-
-
-
-
-
-40
-
-
10
I
F(AV)
© NXP B.V. 2009. All rights reserved.
δ = 1
003aac979
Max
200
200
200
20
20
137
125
0.2
0.2
150
150
8
(A)
15
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
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